Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

Part NumberSIDR638DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 100A SO-8

DatasheetSIDR638DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 100A (Tc) 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR638DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR638DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR638DP-T1-GE3.
We are offering SIDR638DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR638DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR638DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	10500pF @ 20V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR638DP-T1-GE3 - Related Products

	SSM3K37FS,LF	Toshiba Semiconductor and Storage, N-Channel 20V 200mA (Ta) 100mW (Ta) Surface Mount SSM, U-MOSIII	View
	AON6414A	Alpha & Omega Semiconductor Inc., N-Channel 30V 13A (Ta), 30A (Tc) 2.3W (Ta), 31W (Tc) Surface Mount 8-DFN (5x6),	View
	IRFS3107TRLPBF	Infineon Technologies, N-Channel 75V 195A (Tc) 370W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXTP100N04T2	IXYS, N-Channel 40V 100A (Tc) 150W (Tc) Through Hole TO-220AB, TrenchT2™	View
	PSMN013-60YLX	Nexperia USA Inc., N-Channel 60V 53A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	DMN4008LFG-7	Diodes Incorporated, N-Channel 40V 14.4A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	FDS5690	ON Semiconductor, N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	STL120N4LF6AG	STMicroelectronics, N-Channel 40V 120A (Tc) 96W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™	View
	STL90N6F7	STMicroelectronics, N-Channel 60V 90A (Tc) 4.8W (Ta), 94W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	STB11NK40ZT4	STMicroelectronics, N-Channel 400V 9A (Tc) 110W (Tc) Surface Mount D2PAK, SuperMESH™	View
	STL25N60M2-EP	STMicroelectronics, N-Channel 600V 16A (Tc) 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ M2-EP	View
	FDD5670	ON Semiconductor, N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®	View

SIDR638DP-T1-GE3 - Tags

SIDR638DP-T1-GE3 SIDR638DP-T1-GE3 PDF SIDR638DP-T1-GE3 datasheet SIDR638DP-T1-GE3 specification SIDR638DP-T1-GE3 image SIDR638DP-T1-GE3 India Renesas Electronics India SIDR638DP-T1-GE3 buy SIDR638DP-T1-GE3 SIDR638DP-T1-GE3 price SIDR638DP-T1-GE3 distributor SIDR638DP-T1-GE3 supplier SIDR638DP-T1-GE3 wholesales