Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

Part NumberSIDR622DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 150V

DatasheetSIDR622DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR622DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR622DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR622DP-T1-GE3.
We are offering SIDR622DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR622DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR622DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	64.6A (Ta), 56.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1516pF @ 75V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR622DP-T1-GE3 - Related Products

	PSMN028-100YS,115	Nexperia USA Inc., N-Channel 100V 42A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STP260N6F6	STMicroelectronics, N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VI	View
	RSS070N05FRATB	Rohm Semiconductor, N-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	TK8P60W5,RVQ	Toshiba Semiconductor and Storage, N-Channel 600V 8A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV	View
	IRLR7807ZTRPBF	Infineon Technologies, N-Channel 30V 43A (Tc) 40W (Tc) Surface Mount D-Pak, HEXFET®	View
	CSD19538Q2	Texas Instruments, N-Channel 100V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	CSD17551Q5A	Texas Instruments, N-Channel 30V 48A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	IRFPF40PBF	Vishay Siliconix, N-Channel 900V 4.7A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	NTD4965NT4G	ON Semiconductor, N-Channel 30V 13A (Ta), 68A (Tc) 1.39W (Ta) Surface Mount DPAK-3,	View
	SPB07N60C3ATMA1	Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	IPD200N15N3GATMA1	Infineon Technologies, N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	IXFK120N20	IXYS, N-Channel 200V 120A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View

SIDR622DP-T1-GE3 - Tags

SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 PDF SIDR622DP-T1-GE3 datasheet SIDR622DP-T1-GE3 specification SIDR622DP-T1-GE3 image SIDR622DP-T1-GE3 India Renesas Electronics India SIDR622DP-T1-GE3 buy SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 price SIDR622DP-T1-GE3 distributor SIDR622DP-T1-GE3 supplier SIDR622DP-T1-GE3 wholesales