Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

Part NumberSIDR622DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 150V

DatasheetSIDR622DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR622DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR622DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR622DP-T1-GE3.
We are offering SIDR622DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR622DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR622DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	64.6A (Ta), 56.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1516pF @ 75V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR622DP-T1-GE3 - Related Products

	STF13N95K3	STMicroelectronics, N-Channel 950V 10A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH3™	View
	STW18NM80	STMicroelectronics, N-Channel 800V 17A (Tc) 190W (Tc) Through Hole TO-247-3, MDmesh™	View
	HUF75344P3	ON Semiconductor, N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-220-3, UltraFET™	View
	FDD13AN06A0	ON Semiconductor, N-Channel 60V 9.9A (Ta), 50A (Tc) 115W (Tc) Surface Mount DPAK, PowerTrench®	View
	PSMN3R3-80BS,118	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View
	R6012JNJGTL	Rohm Semiconductor, N-Channel 600V 12A (Tc) 160W (Tc) Surface Mount LPTS (D2PAK),	View
	STH265N6F6-2AG	STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F6	View
	SK8603160L	Panasonic Electronic Components, N-Channel 30V 22A (Ta), 70A (Tc) 2.8W (Ta), 28W (Tc) Surface Mount HSO8-F4-B,	View
	DMN6069SE-13	Diodes Incorporated, N-Channel 60V 4.3A (Ta), 10A (Tc) 2.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101	View
	FDP8N50NZ	ON Semiconductor, N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3, UniFET™	View
	IRF820ASPBF	Vishay Siliconix, N-Channel 500V 2.5A (Tc) 50W (Tc) Surface Mount D2PAK,	View
	IPB027N10N3GATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View

SIDR622DP-T1-GE3 - Tags

SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 PDF SIDR622DP-T1-GE3 datasheet SIDR622DP-T1-GE3 specification SIDR622DP-T1-GE3 image SIDR622DP-T1-GE3 India Renesas Electronics India SIDR622DP-T1-GE3 buy SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 price SIDR622DP-T1-GE3 distributor SIDR622DP-T1-GE3 supplier SIDR622DP-T1-GE3 wholesales