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SIB452DK-T1-GE3

SIB452DK-T1-GE3

Part NumberSIB452DK-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 190V 1.5A SC75-6

DatasheetSIB452DK

Package / CasePowerPAK® SC-75-6L

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single

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SIB452DK-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIB452DK
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	190V
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	135pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-75-6L Single
Package / Case	PowerPAK® SC-75-6L

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