SIB411DK-T1-GE3

Part NumberSIB411DK-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 9A PPAK SC75-6L

DatasheetSIB411DK

Package / CasePowerPAK® SC-75-6L

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single

To learn about the specification of SIB411DK-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIB411DK-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIB411DK-T1-GE3.
We are offering SIB411DK-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIB411DK-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIB411DK

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

66mOhm @ 3.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 10V

FET Feature

Power Dissipation (Max)

2.4W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-75-6L Single

Package / Case

PowerPAK® SC-75-6L

All categories