Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

Part NumberSIAA00DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 25V

DatasheetSIAA40DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIAA00DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIAA00DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIAA00DJ-T1-GE3.
We are offering SIAA00DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIAA00DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIAA40DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	1090pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIAA00DJ-T1-GE3 - Related Products

	CSD16340Q3	Texas Instruments, N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	IRF4104PBF	Infineon Technologies, N-Channel 40V 75A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	RD3P050SNFRATL	Rohm Semiconductor, N-Channel 100V 5A (Ta) 15W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	IRF644STRRPBF	Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	IPD30N08S2L21ATMA1	Infineon Technologies, N-Channel 75V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	SI4368DY-T1-E3	Vishay Siliconix, N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SQD100N04-3M6_GE3	Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,	View
	FDT86246L	ON Semiconductor, N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	IRLR2905TRPBF	Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SIHP22N60E-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole,	View
	SIS184DN-T1-GE3	Vishay Siliconix, N-Channel 60V 17.4A (Ta), 65.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S, TrenchFET® Gen IV	View
	STI40N65M2	STMicroelectronics, N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK, MDmesh™ M2	View

SIAA00DJ-T1-GE3 - Tags

SIAA00DJ-T1-GE3 SIAA00DJ-T1-GE3 PDF SIAA00DJ-T1-GE3 datasheet SIAA00DJ-T1-GE3 specification SIAA00DJ-T1-GE3 image SIAA00DJ-T1-GE3 India Renesas Electronics India SIAA00DJ-T1-GE3 buy SIAA00DJ-T1-GE3 SIAA00DJ-T1-GE3 price SIAA00DJ-T1-GE3 distributor SIAA00DJ-T1-GE3 supplier SIAA00DJ-T1-GE3 wholesales