SIA907EDJT-T1-GE3


SIA907EDJT-T1-GE3

Part NumberSIA907EDJT-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIA907EDJT-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusNot For New Designs
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual

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SIA907EDJT-T1-GE3 - Tags

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