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SIA907EDJT-T1-GE3

SIA907EDJT-T1-GE3

Part NumberSIA907EDJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2P-CH 20V 4.5A SC-70-6L

DatasheetSIA907EDJT-T1-GE3

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 7.8W Surface Mount

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SIA907EDJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SIA907EDJT-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	7.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual

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