SIA850DJ-T1-GE3

Part NumberSIA850DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 190V 0.95A SC70-6

DatasheetSIA850DJ

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

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SIA850DJ-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIA850DJ

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

190V

Current - Continuous Drain (Id) @ 25°C

950mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

3.8Ohm @ 360mA, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

90pF @ 100V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.9W (Ta), 7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Dual

Package / Case