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SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

Part NumberSIA485DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionP-CHANNEL 150-V (D-S) MOSFET

DatasheetSIA485DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 1.6A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

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SIA485DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA485DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	155pF @ 75V
FET Feature	-
Power Dissipation (Max)	15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

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