Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA432DJ-T1-GE3

SIA432DJ-T1-GE3

SIA432DJ-T1-GE3

Part NumberSIA432DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 12A SC70-6

DatasheetSIA432DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA432DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA432DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA432DJ-T1-GE3.
We are offering SIA432DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA432DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA432DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA432DJ-T1-GE3 - Related Products

	VN10LP	Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	IRFS38N20DTRLP	Infineon Technologies, N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXFK50N85X	IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™	View
	SQS850EN-T1_GE3	Vishay Siliconix, N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8,	View
	SQM40014EM_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, Automotive, AEC-Q101, TrenchFET®	View
	TSM850N06CX RFG	Taiwan Semiconductor Corporation, N-Channel 60V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23,	View
	BUK9214-30A,118	Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	R6009KNJTL	Rohm Semiconductor, N-Channel 600V 9A (Tc) 94W (Tc) Surface Mount TO-263,	View
	DMT6015LSS-13	Diodes Incorporated, N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO,	View
	FDB045AN08A0	ON Semiconductor, N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D²PAK, PowerTrench®	View
	IRFL024ZTRPBF	Infineon Technologies, N-Channel 55V 5.1A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	IPS70R950CEAKMA1	Infineon Technologies, N-Channel 700V 7.4A (Tc) 68W (Tc) Through Hole PG-TO251, CoolMOS™	View

SIA432DJ-T1-GE3 - Tags

SIA432DJ-T1-GE3 SIA432DJ-T1-GE3 PDF SIA432DJ-T1-GE3 datasheet SIA432DJ-T1-GE3 specification SIA432DJ-T1-GE3 image SIA432DJ-T1-GE3 India Renesas Electronics India SIA432DJ-T1-GE3 buy SIA432DJ-T1-GE3 SIA432DJ-T1-GE3 price SIA432DJ-T1-GE3 distributor SIA432DJ-T1-GE3 supplier SIA432DJ-T1-GE3 wholesales