Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

Part NumberSIA421DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 12A SC70-6

DatasheetSIA421DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA421DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA421DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA421DJ-T1-GE3.
We are offering SIA421DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA421DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA421DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	35mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA421DJ-T1-GE3 - Related Products

	ZXMP6A17GQTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	FDMC86261P	ON Semiconductor, P-Channel 150V 2.7A (Ta), 9A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	DMP1245UFCL-7	Diodes Incorporated, P-Channel 12V 6.6A (Ta) 613mW (Ta) Surface Mount X1-DFN1616-6 (Type E),	View
	IRFHM9331TRPBF	Infineon Technologies, P-Channel 30V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3), HEXFET®	View
	SI7615CDN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen III	View
	FDMA910PZ	ON Semiconductor, P-Channel 20V 9.4A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	PMPB47XP,115	Nexperia USA Inc., P-Channel 30V 4A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	SI2303CDS-T1-E3	Vishay Siliconix, P-Channel 30V 2.7A (Tc) 2.3W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI3433CDV-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 1.6W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	IRFR5305TRLPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SUM55P06-19L-E3	Vishay Siliconix, P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	ZXM62P03E6TA	Diodes Incorporated, P-Channel 30V 1.5A (Ta) 625mW (Ta) Surface Mount SOT-26,	View

SIA421DJ-T1-GE3 - Tags

SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 PDF SIA421DJ-T1-GE3 datasheet SIA421DJ-T1-GE3 specification SIA421DJ-T1-GE3 image SIA421DJ-T1-GE3 India Renesas Electronics India SIA421DJ-T1-GE3 buy SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 price SIA421DJ-T1-GE3 distributor SIA421DJ-T1-GE3 supplier SIA421DJ-T1-GE3 wholesales