SI9926CDY-T1-GE3
SI9926CDY-T1-GE3
Part Number SI9926CDY-T1-GE3 Description MOSFET 2N-CH 20V 8A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SO
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SI9926CDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI9926CDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 18mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO Base Part Number SI9926
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