SI9926BDY-T1-E3

Part NumberSI9926BDY-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 20V 6.2A 8-SOIC

DatasheetSI9926BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 20V 6.2A 1.14W Surface Mount 8-SO

To learn about the specification of SI9926BDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI9926BDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI9926BDY-T1-E3.
We are offering SI9926BDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI9926BDY-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI9926BDY

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.2A

Rds On (Max) @ Id, Vgs

20mOhm @ 8.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

1.14W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Base Part Number

SI9926

All categories