SI8900EDB-T2-E1

Part NumberSI8900EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 20V 5.4A 10-MFP

DatasheetSI8900EDB

Package / Case10-UFBGA, CSPBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 1W Surface Mount 10-Micro Foot™ CSP (2x5)

To learn about the specification of SI8900EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8900EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8900EDB-T2-E1.
We are offering SI8900EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8900EDB-T2-E1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI8900EDB

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.4A

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

1V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

10-UFBGA, CSPBGA

Supplier Device Package

10-Micro Foot™ CSP (2x5)

Base Part Number

SI8900

All categories