Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8819EDB-T2-E1

SI8819EDB-T2-E1

SI8819EDB-T2-E1

Part NumberSI8819EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 2.9A 4-MICROFOOT

DatasheetSI8819EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8819EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8819EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8819EDB-T2-E1.
We are offering SI8819EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8819EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8819EDB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 3.7V
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 6V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8819EDB-T2-E1 - Related Products

	AOD403	Alpha & Omega Semiconductor Inc., P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (Tc) Surface Mount TO-252, (D-Pak),	View
	FDS4675	ON Semiconductor, P-Channel 40V 11A (Ta) 2.4W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SQJ401EP-T1_GE3	Vishay Siliconix, P-Channel 12V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	TSM600P03CS RLG	Taiwan Semiconductor Corporation, P-Channel 30V 4.7A (Tc) 2.1W (Tc) Surface Mount 8-SOP,	View
	DMP2078LCA3-7	Diodes Incorporated, P-Channel 20V 3.4A (Ta) 810mW (Ta) Surface Mount X4-DSN1006-3,	View
	FDMC2523P	ON Semiconductor, P-Channel 150V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3), QFET®	View
	SI3477DV-T1-GE3	Vishay Siliconix, P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	NTNS3A65PZT5G	ON Semiconductor, P-Channel 20V 281mA (Ta) 155mW (Ta) Surface Mount SOT-883 (XDFN3) (1x0.6),	View
	ZVP4424A	Diodes Incorporated, P-Channel 240V 200mA (Ta) 750mW (Ta) Through Hole TO-92-3,	View
	RE1C002ZPTL	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),	View
	DMP2008UFG-13	Diodes Incorporated, P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View
	DMP6023LE-13	Diodes Incorporated, P-Channel 60V 7A (Ta), 18.2A (Tc) 2W (Ta) Surface Mount SOT-223,	View

SI8819EDB-T2-E1 - Tags

SI8819EDB-T2-E1 SI8819EDB-T2-E1 PDF SI8819EDB-T2-E1 datasheet SI8819EDB-T2-E1 specification SI8819EDB-T2-E1 image SI8819EDB-T2-E1 India Renesas Electronics India SI8819EDB-T2-E1 buy SI8819EDB-T2-E1 SI8819EDB-T2-E1 price SI8819EDB-T2-E1 distributor SI8819EDB-T2-E1 supplier SI8819EDB-T2-E1 wholesales