Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8819EDB-T2-E1

SI8819EDB-T2-E1

SI8819EDB-T2-E1

Part NumberSI8819EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 2.9A 4-MICROFOOT

DatasheetSI8819EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8819EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8819EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8819EDB-T2-E1.
We are offering SI8819EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8819EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8819EDB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 3.7V
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 6V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8819EDB-T2-E1 - Related Products

	SIUD403ED-T1-GE3	Vishay Siliconix, P-Channel 20V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	SI2377EDS-T1-GE3	Vishay Siliconix, P-Channel 20V 4.4A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	BSS84PH6327XTSA2	Infineon Technologies, P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	IPD50P04P413ATMA1	Infineon Technologies, P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	STS5P3LLH6	STMicroelectronics, P-Channel 30V 5A (Ta) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ H6	View
	FDT458P	ON Semiconductor, P-Channel 30V 3.4A (Ta) 3W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	DMP3099L-13	Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.08W (Ta) Surface Mount SOT-23,	View
	BSS314PEH6327XTSA1	Infineon Technologies, P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	SUD09P10-195-GE3	Vishay Siliconix, P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IRF9630PBF	Vishay Siliconix, P-Channel 200V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	BSS84-7-F	Diodes Incorporated, P-Channel 50V 130mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	MMSF3P02HDR2G	ON Semiconductor, P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View

SI8819EDB-T2-E1 - Tags

SI8819EDB-T2-E1 SI8819EDB-T2-E1 PDF SI8819EDB-T2-E1 datasheet SI8819EDB-T2-E1 specification SI8819EDB-T2-E1 image SI8819EDB-T2-E1 India Renesas Electronics India SI8819EDB-T2-E1 buy SI8819EDB-T2-E1 SI8819EDB-T2-E1 price SI8819EDB-T2-E1 distributor SI8819EDB-T2-E1 supplier SI8819EDB-T2-E1 wholesales