SI8809EDB-T2-E1

Part NumberSI8809EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 1.9A MICROFOOT

DatasheetSI8809EDB-T2-E1

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

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SI8809EDB-T2-E1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI8809EDB-T2-E1

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 8V

Vgs (Max)

±8V

FET Feature

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA

All categories

SI8809EDB-T2-E1

Part NumberSI8809EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 1.9A MICROFOOT

DatasheetSI8809EDB-T2-E1

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

SI8809EDB-T2-E1 - Product Attributes

SI8809EDB-T2-E1 - Tags