SI8483DB-T2-E1
SI8483DB-T2-E1
Part Number SI8483DB-T2-E1
Description MOSFET P-CH 12V 16A MICROFOOT
Package / Case 6-UFBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
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SI8483DB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8483DB-T2-E1
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 6V
FET Feature -
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-Micro Foot™ (1.5x1)
Package / Case 6-UFBGA
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