SI8457DB-T1-E1
SI8457DB-T1-E1
Part Number SI8457DB-T1-E1
Description MOSFET P-CH 12V MICROFOOT
Package / Case 4-UFBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 12V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
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SI8457DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8457DB-T1-E1
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 6V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA
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