Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8457DB-T1-E1

SI8457DB-T1-E1

SI8457DB-T1-E1

Part NumberSI8457DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V MICROFOOT

DatasheetSI8457DB-T1-E1

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)

To learn about the specification of SI8457DB-T1-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8457DB-T1-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8457DB-T1-E1.
We are offering SI8457DB-T1-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8457DB-T1-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8457DB-T1-E1
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	93nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 6V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (1.6x1.6)
Package / Case	4-UFBGA

SI8457DB-T1-E1 - Related Products

	DMG4413LSS-13	Diodes Incorporated, P-Channel 30V 10.5A (Ta) 1.7W (Ta) Surface Mount 8-SOP,	View
	FDMC6675BZ	ON Semiconductor, P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SI1077X-T1-GE3	Vishay Siliconix, P-Channel 20V 330mW (Ta) Surface Mount SC-89-6, TrenchFET®	View
	SI6423DQ-T1-GE3	Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View
	US5U38TR	Rohm Semiconductor, P-Channel 20V 1A (Ta) 1W (Ta) Surface Mount TUMT5,	View
	PMV27UPEAR	Nexperia USA Inc., P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101	View
	SI6423DQ-T1-E3	Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View
	FQP2P40-F080	ON Semiconductor, P-Channel 400V 2A (Tc) 63W (Tc) Through Hole TO-220-3, QFET®	View
	ES6U1T2R	Rohm Semiconductor, P-Channel 12V 1.3A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	NTGS3443T1G	ON Semiconductor, P-Channel 20V 2.2A (Ta) 500mW (Ta) Surface Mount 6-TSOP,	View
	DMP2088LCP3-7	Diodes Incorporated, P-Channel 20V 2.9A (Ta) 1.13W Surface Mount X2-DSN1006-3,	View
	SQD19P06-60L_T4GE3	Vishay Siliconix, P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View

SI8457DB-T1-E1 - Tags

SI8457DB-T1-E1 SI8457DB-T1-E1 PDF SI8457DB-T1-E1 datasheet SI8457DB-T1-E1 specification SI8457DB-T1-E1 image SI8457DB-T1-E1 India Renesas Electronics India SI8457DB-T1-E1 buy SI8457DB-T1-E1 SI8457DB-T1-E1 price SI8457DB-T1-E1 distributor SI8457DB-T1-E1 supplier SI8457DB-T1-E1 wholesales