SI8439DB-T1-E1

Part NumberSI8439DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V MICROFOOT

DatasheetSI8439DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

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SI8439DB-T1-E1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI8439DB

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Vgs (Max)

±5V

FET Feature

Power Dissipation (Max)

1.1W (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-UFBGA

All categories