SI8435DB-T1-E1

Part NumberSI8435DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 10A 2X2 4-MFP

DatasheetSI8435DB

Package / Case4-XFBGA, CSPBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 10A (Tc) 2.78W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

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SI8435DB-T1-E1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI8435DB

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

41mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 10V

FET Feature

Power Dissipation (Max)

2.78W (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA, CSPBGA

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