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SI8425DB-T1-E1

SI8425DB-T1-E1

Part NumberSI8425DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V MICROFOOT

DatasheetS18425DB

Package / Case4-UFBGA, WLCSP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)

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SI8425DB-T1-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	S18425DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-WLCSP (1.6x1.6)
Package / Case	4-UFBGA, WLCSP

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SI8425DB-T1-E1 - Tags

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