SI8417DB-T2-E1

Part NumberSI8417DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 14.5A 2X2 6MFP

DatasheetSI8417DB

Package / Case6-MICRO FOOT®CSP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 14.5A (Tc) 2.9W (Ta), 6.57W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

To learn about the specification of SI8417DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8417DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8417DB-T2-E1.
We are offering SI8417DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8417DB-T2-E1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI8417DB

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

21mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2220pF @ 6V

FET Feature

Power Dissipation (Max)

2.9W (Ta), 6.57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-Micro Foot™ (1.5x1)

Package / Case

6-MICRO FOOT®CSP

All categories