SI8416DB-T1-GE3

Part NumberSI8416DB-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 16A MICRO

DatasheetSI8416DB

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot

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SI8416DB-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI8416DB

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 4V

FET Feature

Power Dissipation (Max)

2.77W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-microfoot

Package / Case

6-UFBGA

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