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SI7998DP-T1-GE3

SI7998DP-T1-GE3

Part NumberSI7998DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 30V 25A PPAK SO-8

DatasheetSI7998DP

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual

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SI7998DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI7998DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25A, 30A
Rds On (Max) @ Id, Vgs	9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Power - Max	22W, 40W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual

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