SI7998DP-T1-GE3


SI7998DP-T1-GE3

Part NumberSI7998DP-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI7998DP-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A, 30A
Rds On (Max) @ Id, Vgs9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V
Power - Max22W, 40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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SI7998DP-T1-GE3 - Tags

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