SI7911DN-T1-GE3

Part NumberSI7911DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2P-CH 20V 4.2A 1212-8

DatasheetSI7911DN

Package / CasePowerPAK® 1212-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 P-Channel (Dual) 20V 4.2A 1.3W Surface Mount PowerPAK® 1212-8 Dual

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SI7911DN-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI7911DN

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.2A

Rds On (Max) @ Id, Vgs

51mOhm @ 5.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package