SI7810DN-T1-E3
SI7810DN-T1-E3
Part Number SI7810DN-T1-E3
Description MOSFET N-CH 100V 3.4A 1212-8
Package / Case PowerPAK® 1212-8
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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SI7810DN-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7810DN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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