SI7703EDN-T1-GE3

Part NumberSI7703EDN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 4.3A 1212-8 PPAK

DatasheetSI7703EDN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8

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SI7703EDN-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI7703EDN

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 6.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±12V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case