SI7655DN-T1-GE3
SI7655DN-T1-GE3
Part Number SI7655DN-T1-GE3 Description MOSFET P-CH 20V 40A PPAK 1212 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
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SI7655DN-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si7655DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 10V FET Feature - Power Dissipation (Max) 4.8W (Ta), 57W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
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