SI7485DP-T1-GE3

Part NumberSI7485DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12.5A PPAK SO-8

DatasheetSi7485DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12.5A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

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SI7485DP-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Si7485DP

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 5V

Vgs (Max)

±8V

FET Feature

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case