SI7454DDP-T1-GE3

Part NumberSI7454DDP-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7454DDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
FET Feature	-
Power Dissipation (Max)	4.1W (Ta), 29.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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RQ6E055BNTCR	Rohm Semiconductor, N-Channel 30V 5.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
SIHJ6N65E-T1-GE3	Vishay Siliconix, N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8,	View