SI7403BDN-T1-E3

Part NumberSI7403BDN-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 8A 1212-8

DatasheetSI7403BDN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8

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SI7403BDN-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI7403BDN

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

74mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 10V

FET Feature

Power Dissipation (Max)

3.1W (Ta), 9.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case