SI7366DP-T1-GE3


SI7366DP-T1-GE3

Part NumberSI7366DP-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI7366DP-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

SI7366DP-T1-GE3 - Tags

SI7366DP-T1-GE3 SI7366DP-T1-GE3 PDF SI7366DP-T1-GE3 datasheet SI7366DP-T1-GE3 specification SI7366DP-T1-GE3 image SI7366DP-T1-GE3 India Renesas Electronics India SI7366DP-T1-GE3 buy SI7366DP-T1-GE3 SI7366DP-T1-GE3 price SI7366DP-T1-GE3 distributor SI7366DP-T1-GE3 supplier SI7366DP-T1-GE3 wholesales