SI7172DP-T1-GE3
SI7172DP-T1-GE3
Part Number SI7172DP-T1-GE3 Description MOSFET N-CH 200V 25A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 25A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SI7172DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7172DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7172DP-T1-GE3.
We are offering SI7172DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7172DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7172DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 70mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 100V FET Feature - Power Dissipation (Max) 5.4W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SI7172DP-T1-GE3 - Related ProductsMore >>
CSD15380F3 Texas Instruments, N-Channel 20V 500mA (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
SIRA12BDP-T1-GE3 Vishay Siliconix, N-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
IRFU1N60APBF Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA,
View
STW26NM60N STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II
View
STH140N6F7-6 STMicroelectronics, N-Channel 60V 80A (Tc) 158W (Tc) Surface Mount H2PAK-6, STripFET™
View
SI7634BDP-T1-GE3 Vishay Siliconix, N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
STP14NK50ZFP STMicroelectronics, N-Channel 500V 14A (Tc) 35W (Tc) Through Hole TO-220FP, SuperMESH™
View
IPA60R600P6XKSA1 Infineon Technologies, N-Channel 600V 4.9A (Tc) 28W (Tc) Through Hole PG-TO220-FP, CoolMOS™ P6
View
PSMN2R0-60PS,127 Nexperia USA Inc., N-Channel 60V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
View
BSS806NH6327XTSA1 Infineon Technologies, N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
IRLR3636TRPBF Infineon Technologies, N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-Pak, HEXFET®
View
STP12N120K5 STMicroelectronics, N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ K5
View
SI7172DP-T1-GE3 - Tags
English
