SI6463BDQ-T1-E3

Part NumberSI6463BDQ-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 6.2A 8-TSSOP

DatasheetSi6463BDQ

Package / Case8-TSSOP (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

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SI6463BDQ-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Si6463BDQ

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

15mOhm @ 7.4A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±8V

FET Feature

Power Dissipation (Max)

1.05W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

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