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SI6415DQ-T1-GE3

SI6415DQ-T1-GE3

Part NumberSI6415DQ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 6.5A 8-TSSOP

DatasheetSi6415DQ

Package / Case8-TSSOP (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP

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SI6415DQ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si6415DQ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)

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