SI5935CDC-T1-GE3
SI5935CDC-T1-GE3
Part Number SI5935CDC-T1-GE3 Description MOSFET 2P-CH 20V 4A 1206-8 Package / Case 8-SMD, Flat LeadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
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SI5935CDC-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI5935CDC Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 100mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ Base Part Number SI5935
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