SI5908DC-T1-GE3
SI5908DC-T1-GE3
Part Number SI5908DC-T1-GE3 Description MOSFET 2N-CH 20V 4.4A 1206-8 Package / Case 8-SMD, Flat LeadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
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SI5908DC-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI5908DC Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.4A Rds On (Max) @ Id, Vgs 40mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ Base Part Number SI5908
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