SI5858DU-T1-E3

Part NumberSI5858DU-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 6A PPAK CHIPFET

DatasheetSI5858DU

Package / CasePowerPAK® ChipFET™ Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface Mount PowerPAK® ChipFet Dual

To learn about the specification of SI5858DU-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI5858DU-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI5858DU-T1-E3.
We are offering SI5858DU-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI5858DU-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI5858DU

Standard Package

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2.3W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Dual

Package / Case

PowerPAK® ChipFET™ Dual

All categories