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SI5513CDC-T1-E3


SI5513CDC-T1-E3

Part NumberSI5513CDC-T1-E3

Manufacturer

Description

Datasheet

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI5513CDC-T1-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A, 3.7A
Rds On (Max) @ Id, Vgs55mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds285pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead

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