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SI5513CDC-T1-E3

SI5513CDC-T1-E3

Part NumberSI5513CDC-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 20V 4A 1206-8

DatasheetSI5513CDC

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount

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SI5513CDC-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI5513CDC
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A, 3.7A
Rds On (Max) @ Id, Vgs	55mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	285pF @ 10V
Power - Max	3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead

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SI5513CDC-T1-E3 - Tags

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