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SI4931DY-T1-GE3

SI4931DY-T1-GE3

Part NumberSI4931DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2P-CH 12V 6.7A 8SOIC

DatasheetSI4931DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO

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SI4931DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI4931DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	6.7A
Rds On (Max) @ Id, Vgs	18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Base Part Number	SI4931

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