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SI4922BDY-T1-GE3


SI4922BDY-T1-GE3

Part NumberSI4922BDY-T1-GE3

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI4922BDY-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2070pF @ 15V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Base Part NumberSI4922

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