SI4900DY-T1-GE3

Part NumberSI4900DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 60V 5.3A 8-SOIC

DatasheetSI4900DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SO

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SI4900DY-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI4900DY

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.3A

Rds On (Max) @ Id, Vgs

58mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

665pF @ 15V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Base Part Number

SI4900

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