Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4896DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.56W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

DMN2050L-7	Diodes Incorporated, N-Channel 20V 5.9A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
SI2342DS-T1-GE3	Vishay Siliconix, N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23, TrenchFET®	View
IRFR220TRRPBF	Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
IPT60R028G7XTMA1	Infineon Technologies, N-Channel 600V 75A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ G7	View
IPD60R385CPATMA1	Infineon Technologies, N-Channel 600V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CP	View
IRF1404ZSTRLPBF	Infineon Technologies, N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®	View
FQP6N60C	ON Semiconductor, N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3, QFET®	View
STF25N80K5	STMicroelectronics, N-Channel 800V 19.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH5™	View
STB12NK80ZT4	STMicroelectronics, N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH™	View
FDD9409L-F085	ON Semiconductor, N-Channel 40V 90A (Tc) 150W (Tj) Surface Mount TO-252, (D-Pak), PowerTrench®	View
NTF3055-100T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261),	View
IXTP140N12T2	IXYS, N-Channel 120V 140A (Tc) 577W (Tc) Through Hole TO-220AB, TrenchT2™	View

SI4896DY-T1-E3

Part NumberSI4896DY-T1-E3