SI4829DY-T1-E3

Part NumberSI4829DY-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2A 8-SOIC

DatasheetSI4829DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO

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SI4829DY-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI4829DY

Standard Package

2500

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

215mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2W (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

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