SI4816BDY-T1-GE3

Part NumberSI4816BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 30V 5.8A 8-SOIC

DatasheetSi4816BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SO

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SI4816BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	Si4816BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	LITTLE FOOT®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.8A, 8.2A
Rds On (Max) @ Id, Vgs	18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1W, 1.25W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Base Part Number	SI4816

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SI4816BDY-T1-GE3 - Tags

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