SI4800BDY-T1-GE3
SI4800BDY-T1-GE3
Part Number SI4800BDY-T1-GE3 Description MOSFET N-CH 30V 6.5A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO
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SI4800BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si4800BDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V Vgs (Max) ±25V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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SI4800BDY-T1-GE3 - Tags
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