SI4501BDY-T1-GE3

Part NumberSI4501BDY-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI4501BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V, 8V
Current - Continuous Drain (Id) @ 25°C	12A, 8A
Rds On (Max) @ Id, Vgs	17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	805pF @ 15V
Power - Max	4.5W, 3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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SSM6L36FE,LM	Toshiba Semiconductor and Storage, Mosfet Array N and P-Channel 20V 500mA, 330mA 150mW Surface Mount ES6 (1.6x1.6),	View