SI4501BDY-T1-GE3

Part NumberSI4501BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 30V/8V 8SOIC

DatasheetSI4501BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel, Common Drain 30V, 8V 12A, 8A 4.5W, 3.1W Surface Mount 8-SOIC

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SI4501BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI4501BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V, 8V
Current - Continuous Drain (Id) @ 25°C	12A, 8A
Rds On (Max) @ Id, Vgs	17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	805pF @ 15V
Power - Max	4.5W, 3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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