Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4164DY-T1-GE3

SI4164DY-T1-GE3

SI4164DY-T1-GE3

Part NumberSI4164DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 30A 8-SOIC

DatasheetSI4164DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4164DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4164DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4164DY-T1-GE3.
We are offering SI4164DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4164DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4164DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3545pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4164DY-T1-GE3 - Related Products

	SI3476DV-T1-GE3	Vishay Siliconix, N-Channel 80V 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	IPD60R600P7SAUMA1	Infineon Technologies, N-Channel 600V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	IRFB4620PBF	Infineon Technologies, N-Channel 200V 25A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®	View
	STP20NM60	STMicroelectronics, N-Channel 600V 20A (Tc) 192W (Tc) Through Hole TO-220AB, MDmesh™	View
	IRF520NPBF	Infineon Technologies, N-Channel 100V 9.7A (Tc) 48W (Tc) Through Hole TO-220AB, HEXFET®	View
	IXFX90N30	IXYS, N-Channel 300V 90A (Tc) 560W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	SI4420BDY-T1-E3	Vishay Siliconix, N-Channel 30V 9.5A (Ta) 1.4W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IPB60R099C6ATMA1	Infineon Technologies, N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™	View
	SSM3K123TU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII	View
	FDMS7678	ON Semiconductor, N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	FDMS86101	ON Semiconductor, N-Channel 100V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	FCA22N60N	ON Semiconductor, N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-3PN, SupreMOS™	View

SI4164DY-T1-GE3 - Tags

SI4164DY-T1-GE3 SI4164DY-T1-GE3 PDF SI4164DY-T1-GE3 datasheet SI4164DY-T1-GE3 specification SI4164DY-T1-GE3 image SI4164DY-T1-GE3 India Renesas Electronics India SI4164DY-T1-GE3 buy SI4164DY-T1-GE3 SI4164DY-T1-GE3 price SI4164DY-T1-GE3 distributor SI4164DY-T1-GE3 supplier SI4164DY-T1-GE3 wholesales