SI4128DY-T1-GE3
SI4128DY-T1-GE3
Part Number SI4128DY-T1-GE3
Description MOSFET N-CH 30V 10.9A 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO
To learn about the specification of SI4128DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4128DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4128DY-T1-GE3.
We are offering SI4128DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4128DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4128DY
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4128DY-T1-GE3 - Related ProductsMore >>
RD3U080CNTL1
Rohm Semiconductor, N-Channel 250V 8A (Tc) 85W (Tc) Surface Mount TO-252,
View
STL24N60DM2
STMicroelectronics, N-Channel 600V 15A (Tc) 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2
View
FDS8878
ON Semiconductor, N-Channel 30V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
TN5325N3-G
Microchip Technology, N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole TO-92-3,
View
IPN60R360P7SATMA1
Infineon Technologies, N-Channel 600V 9A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
SI7686DP-T1-E3
Vishay Siliconix, N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIR872DP-T1-GE3
Vishay Siliconix, N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
RSR010N10TL
Rohm Semiconductor, N-Channel 100V 1A (Ta) 540mW (Ta) Surface Mount TSMT3,
View
IRFS3206TRRPBF
Infineon Technologies, N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
View
SI2328DS-T1-GE3
Vishay Siliconix, N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IXFP72N30X3
IXYS, N-Channel 300V 72A (Tc) 390W (Tc) Through Hole TO-220AB, HiPerFET™
View
STD70N10F4
STMicroelectronics, N-Channel 100V 60A (Tc) 125W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™
View
SI4128DY-T1-GE3 - Tags