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SI3900DV-T1-GE3

SI3900DV-T1-GE3

Part NumberSI3900DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 20V 2A 6-TSOP

DatasheetSI3900DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

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SI3900DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI3900DV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A
Rds On (Max) @ Id, Vgs	125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP
Base Part Number	SI3900

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SI3900DV-T1-GE3 - Tags

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